Datasheet

CNY17
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Vishay Semiconductors
Rev. 2.1, 08-Jan-14
2
Document Number: 83606
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Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
Forward current I
F
60 mA
Forward surge current t
p
≤ 10 μs I
FSM
2.5 A
LED power dissipation at 25 °C P
diss
100 mW
OUTPUT
Collector emitter breakdown voltage BV
CEO
70 V
Emitter base breakdown voltage BV
EBO
7V
Collector current
I
C
50 mA
t
p
/T = 0.5, t
p
≤ 10 ms I
C
100 mA
Power dissipation P
diss
150 mW
COUPLER
Isolation test voltage between emitter and detector t = 1 min V
ISO
5000 V
RMS
Storage temperature T
stg
-55 to +150 °C
Operating temperature T
amb
-55 to +110 °C
Soldering temperature
(1)
2 mm from case, ≤ 10 s T
sld
260 °C
Total power dissipation P
diss
250 mW
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 60 mA V
F
1.39 1.65 V
Breakdown voltage I
R
= 10 μA V
BR
6V
Reverse current V
R
= 6 V I
R
0.01 10 μA
Capacitance V
R
= 0 V, f = 1 MHz C
O
25 pF
Thermal resistance R
th
750 K/W
0
50
100
150
200
250
300
0 20 40 60 80 100 120
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
Coupled device
Phototransistor
IR-diode