Datasheet

Document Number: 81863 For technical questions, contact: [e-mail]
www.vishay.com
Rev. 1.3, 26-Oct-09 2
CNY17.
Optocoupler, Phototransistor Output,
with Base Connection
Vishay Semiconductors
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to wave profile for soldering conditions for through hole devices.
Note
(1)
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage
between emitter and detector referred to climate
DIN 50014, part 2, Nov. 74
t = 1 s V
ISO
5000 V
RMS
Creepage distance ≥ 7mm
Clearance distance ≥ 7mm
Isolation thickness between
emitter and detector
≥ 0.4 mm
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
Storage temperature T
stg
- 55 to + 125 °C
Operating temperature T
amb
- 55 to + 100 °C
Soldering temperature
(2)
max. 10 s, dip soldering: distance to
seating plane ≥ 1.5 mm
T
sld
260 °C
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
ELECTRICAL CHARACTERISTCS
(1)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 60 mA V
F
1.25 1.65 V
Breakdown voltage I
R
= 10 mA V
BR
6V
Reverse current V
R
= 6 V I
R
0.01 10 µA
Capacitance V
R
= 0 V, f = 1 MHz C
O
25 pF
Thermal resistance R
th
750 K/W
OUTPUT
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz C
CE
5.2 pF
Collector base capacitance V
CB
= 5 V, f = 1 MHz C
CB
6.5 pF
Emitter base capacitance V
EB
= 5 V, f = 1 MHz C
EB
7.5 pF
Thermal resistance R
th
500 K/W
COUPLER
Collector emitter, saturation voltage V
F
= 10 mA, I
C
= 2.5 mA V
CEsat
0.25 0.4 V
Coupling capacitance C
C
0.6 pF
Collector emitter, leakage current V
CE
= 10 V
CNY17-1 I
CEO
250nA
CNY17-2 I
CEO
250nA
CNY17-3 I
CEO
5 100 nA
CNY17-4 I
CEO
5 100 nA