Datasheet

CNY17F
Document Number 83607
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
7
Figure 15. Saturation Voltage vs. Collector Current and Modulation
Depth CNY17F-4
Figure 16. Permissible Pulse Load
Figure 17. Permissible Power Dissipation for Transistor and Diode
icny17f_15
V
CEsat
=f(I
C
)(T
A
= 25°C)
V
icny17f_16
D=parameter,
T
A
= 25°C, I
F
=f(t
p
)
icny17f_17
P
tot
=f(T
A
)
Figure 18. Permissible Forward Current Diode
Figure 19. Transistor Capacitance
icny17f_18
I
F
=f(T
A
)
icny17f_19
C=f (V
O
)(T
A
= 25°C, f=1.0 MHz)