Datasheet

ManualsBrandsVISHAY ManualsOptoelectronics & DisplaysCNY17F-4 Optocoupler DIP-6 Type (misc.) Phototransistor/Single

CNY17F

Document Number 83607

Rev. 1.5, 26-Oct-04

Vishay Semiconductors

www.vishay.com

18216

Pb-free

Optocoupler, Phototransistor Output, No Base Connection

Features

• Breakdown Voltage, 5300 V

RMS

• No Base Terminal Connection for Improved Com-

mon Mode Interface Immunity

• Long Term Stability

• Industry Standard Dual-in-Line Package

• Lead-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E52744 System Code H or J,

Double Protection

• DIN EN 60747-5-2 (VDE0884)

DIN EN 60747-5-5 pending

• BSI IEC60950 IEC60065

• FIMKO

Description

The CNY17F is an optocoupler consisting af a Gal-

lium Arsenide infrared emitting diode optically cou-

pled to a silicon planar phototransistor detector in a

plastic plug-in DIP-6 package.

The coupling device is suitable for signal transmission

between two electrically separated circuits. The

potential difference between the circuits to be coupled

is not allowed to exceed the maximum permissible

reference voltages.

In contrast to the CNY17 Series, the base terminal of

the F type is not conected, resulting in a substantially

improved common-mode interference immunity.

Order Information

For additional information on the available options refer to

Option Information.

Part Remarks

CNY17F-1 CTR 40 - 80 %, DIP-6

CNY17F-2 CTR 63 - 125 %, DIP-6

CNY17F-3 CTR 100 - 200 %, DIP-6

CNY17F-4 CTR 160 - 320 %, DIP-6

CNY17F-1X006 CTR 40 - 80 %, DIP-6 400 mil (option 6)

CNY17F-1X007 CTR 40 - 80 %, SMD-6 (option 7)

CNY17F-1X009 CTR 40 - 80 %, SMD-6 (option 9)

CNY17F-2X006 CTR 63 - 125 %, DIP-6 400 mil (option 6)

CNY17F-2X007 CTR 63 - 125 %, SMD-6 (option 7)

CNY17F-2X009 CTR 63 - 125 %, SMD-6 (option 9)

CNY17F-3X006 CTR 100 - 200 %, DIP-6 400 mil (option 6)

CNY17F-3X007 CTR 100 - 200 %, SMD-6 (option 7)

CNY17F-3X009 CTR 100 - 200 %, SMD-6 (option 9)

CNY17F-4X006 CTR 160 - 320 %, DIP-6 400 mil (option 6)

CNY17F-4X007 CTR 160 - 320 %, SMD-6 (option 7)

CNY17F-4X009 CTR 160 - 320 %, SMD-6 (option 9)

Summary of content (9 pages)

PAGE 1
CNY17F Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection Features • Breakdown Voltage, 5300 VRMS • No Base Terminal Connection for Improved Common Mode Interface Immunity • Long Term Stability • Industry Standard Dual-in-Line Package • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A 1 6 NC C 2 5 C NC 3 4 E e3 18216 Agency Approvals • UL1577, File No.
PAGE 2
CNY17F Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter VR 6.
PAGE 3
CNY17F Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Min Typ. Max 1.25 1.65 Unit Forward voltage IF = 60 mA VF Breakdown voltage IR = 10 µA VBR Reserve current VR = 6.0 V IR 0.
PAGE 4
CNY17F Vishay Semiconductors Switching Characteristics Linear operation (without saturation) Parameter Test condition Symbol Min Typ. Max Unit Turn-on time IF = 10 mA, VCC = 5.0 V, RL = 75 W ton 3.0 µs Rise time IF = 10 mA, VCC = 5.0 V, RL = 75 W tr 2.0 µs Turn-off time IF = 10 mA, VCC = 5.0 V, RL = 75 W toff 2.3 µs Fall time IF = 10 mA, VCC = 5.0 V, RL = 75 W tf 2.0 µs Cut-off frequency IF = 10 mA, VCC = 5.
PAGE 5
CNY17F Vishay Semiconductors (TA = –25°C, VCE = 5.0 V) IC/IF = f (IF) (TA = 50°C, VCE = 5.0 V) 1 2 3 4 1 2 3 4 A icny17f_06 icny17f_03 Figure 6. Current Transfer Ratio vs. Diode Current Figure 3. Current Transfer Ratio vs. Diode Current (TA = 75°C, VCE = 5.0 V) (TA = 0°C, VCE = 5.0 V) IC/IF = f (IF) 1 2 3 4 icny17f_04 1 2 3 4 icny17f_07 Figure 7. Current Transfer Ratio vs. Diode Current Figure 4. Current Transfer Ratio vs. Diode Current (IF = 10 mA, VCE = 5.
PAGE 6
CNY17F Vishay Semiconductors VCEsat = f (IC) (TA = 25°C) (TA = 25°C) IC = f (VCE) icny17f_09 icny17f_12 Figure 9. Output Characteristics CNY17F-2, -3 Figure 12. Saturation Voltage vs. Collector Current and Modulation Depth CNY17F-1 VF = f (IF) icny17f_10 VCEsat = f (IC) (TA = 25°C) icny17f_13 Figure 10. Forward Voltage Figure 13. Saturation Voltage vs.
PAGE 7
CNY17F Vishay Semiconductors IF = f (TA) V VCEsat = f (IC) (TA = 25°C) icny17f_18 icny17f_15 Figure 18. Permissible Forward Current Diode Figure 15. Saturation Voltage vs. Collector Current and Modulation Depth CNY17F-4 C=f (VO) (TA= 25°C, f=1.0 MHz) D=parameter, TA = 25°C, IF=f(tp) icny17f_19 icny17f_16 Figure 16. Permissible Pulse Load Figure 19. Transistor Capacitance Ptot = f (TA) icny17f_17 Figure 17. Permissible Power Dissipation for Transistor and Diode Document Number 83607 Rev. 1.
PAGE 8
CNY17F Vishay Semiconductors Package Dimensions in Inches (mm) 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .300 (7.62) typ. .048 (0.45) .022 (0.55) .039 (1.00) Min. .130 (3.30) .150 (3.81) 18° 4° typ. .031 (0.80) min. .031 (0.80) .035 (0.90) .018 (0.45) .022 (0.55) .100 (2.54) typ. 3°–9° .114 (2.90) .130 (3.0) .010 (.25) typ. .300–.347 (7.62–8.81) i178004 Option 6 Option 7 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .300 (7.62) TYP.
PAGE 9
CNY17F Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.