Datasheet

CNY17
Document Number 83606
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Current Transfer Ratio
Current Transfer Ratio and collector-emitter leakage current by dash number (T
amb
°C)
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
F
= 60 mA V
F
1.25 1.65 V
Breakdown voltage I
R
= 10 mA V
BR
6.0 V
Reserve current V
R
= 6.0 V I
R
0.01 10 µA
Capacitance V
R
= 0 V, f = 1.0 MHz C
O
25 pF
Thermal resistance R
th
750 K/W
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter capacitance V
CE
= 5.0 V, f = 1.0 MHz C
CE
5.2 pF
Collector - base capacitance V
CB
= 5.0 V, f = 1.0 MHz C
CB
6.5 pF
Emitter - base capacitance V
EB
= 5.0 V, f = 1.0 MHz C
EB
7.5 pF
Thermal resistance R
th
500 K/W
Parameter Test condition Part Symbol Min Ty p. Max Unit
Collector-emitter saturation
voltage
V
F
= 10 mA, I
C
= 2.5 mA V
CEsat
0.25 0.4 V
Coupling capacitance C
C
0.6 pF
Collector-emitter leakage
current
V
CE
= 10 V, I
CEO
CNY17-1 I
CEO
2.0 50 nA
CNY17-2 I
CEO
2.0 50 nA
CNY17-3 I
CEO
5.0 100 nA
CNY17-4 I
CEO
5.0 100 nA
Parameter Test condition Part Symbol Min Ty p. Max Unit
I
C
/I
F
I
F
= 10 mA, V
CE
= 5.0 V CNY17-1 CTR 40 80 %
CNY17-2 CTR 63 125 %
CNY17-3 CTR 100 200 %
CNY17-4 CTR 160 320 %
I
F
= 1.0 mA, V
CE
= 5.0 V CNY17-1 CTR 13 30 %
CNY17-2 CTR 22 45 %
CNY17-3 CTR 34 70 %
CNY17-4 CTR 56 90 %