Datasheet

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CNY17

Document Number 83606

Rev. 1.5, 26-Oct-04

Vishay Semiconductors

www.vishay.com

i179004i179004

Optocoupler, Phototransistor Output, With Base Connection

Features

• Isolation Test Voltage 5300 V

RMS

• Long Term Stability

• Industry Standard Dual-in-Line Package

• Lead-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Agency Approvals

• Underwriters Lab File #E52744

System Code H or J

• DIN EN 60747-5-2 (VDE0884)

DIN EN 60747-5-5 pending

• BSI IEC60950 IEC60065

• FIMKO

Description

The CNY17 is an optically coupled pair consisting of

a Gallium Arsenide infrared emitting diode optically

coupled to a silicon NPN phototransistor.

Signal information, including a DC level, can be trans-

mitted by the device while maintaining a high degree

of electrical isolation between input and output.

The CNY17 can be used to replace relays and trans-

formers in many digital interface applications, as well

as analog applications such as CRT modulation.

Order Information

For additional information on the available options refer to

Option Information.

Part Remarks

CNY17-1 CTR 40 - 80 %, DIP-6

CNY17-2 CTR 63 - 125 %, DIP-6

CNY17-3 CTR 100 - 200 %, DIP-6

CNY17-4 CTR 160 - 320 %, DIP-6

CNY17-1X006 CTR 40 - 80 %, DIP-6 400 mil (option 6)

CNY17-1X007 CTR 40 - 80 %, SMD-6 (option 7)

CNY17-1X009 CTR 40 - 80 %, SMD-6 (option 9)

CNY17-2X006 CTR 63 - 125 %, DIP-6 400 mil (option 6)

CNY17-2X007 CTR 63 - 125 %, SMD-6 (option 7)

CNY17-2X009 CTR 63 - 125 %, SMD-6 (option 9)

CNY17-3X006 CTR 100 - 200 %, DIP-6 400 mil (option 6)

CNY17-3X007 CTR 100 - 200 %, SMD-6 (option 7)

CNY17-3X009 CTR 100 - 200 %, SMD-6 (option 9)

CNY17-4X006 CTR 160 - 320 %, DIP-6 400 mil (option 6)

CNY17-4X007 CTR 160 - 320 %, SMD-6 (option 7)

CNY17-4X009 CTR 160 - 320 %, SMD-6 (option 9)

Summary of content (10 pages)

PAGE 1
CNY17 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • • • • • Isolation Test Voltage 5300 VRMS Long Term Stability Industry Standard Dual-in-Line Package e3 Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A 1 6 B C 2 5 C NC 3 4 E Agency Approvals • Underwriters Lab File #E52744 System Code H or J • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending • BSI IEC60950 IEC60065 • FIMKO Description The CNY17 is an opticall
PAGE 2
CNY17 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter VR 6.
PAGE 3
CNY17 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Min Typ. Max 1.25 1.65 Unit Forward voltage IF = 60 mA VF Breakdown voltage IR = 10 mA VBR Reserve current VR = 6.0 V IR 0.
PAGE 4
CNY17 Vishay Semiconductors Switching Characteristics Linear operation (without saturation) Parameter Test condition Symbol Min Typ. Max Unit Turn-on time IF = 10 mA, VCC = 5.0 V, RL = 75 W ton 3.0 µs Rise time IF = 10 mA, VCC = 5.0 V, RL = 75 W tr 2.0 µs Turn-off time IF = 10 mA, VCC = 5.0 V, RL = 75 W toff 2.3 µs Fall time IF = 10 mA, VCC = 5.0 V, RL = 75 W Cut-off frequency IF = 10 mA, VCC = 5.0 V, tf 2.
PAGE 5
CNY17 Vishay Semiconductors (TA = –25°C, VCE = 5.0 V) IC/IF = f (IF) (TA = 50°C, VCE = 5.0 V) IC/IF = f (IF) 1 2 3 4 1 2 3 4 icny17_06 icny17_03 Figure 6. Current Transfer Ratio vs. Diode Current Figure 3. Current Transfer Ratio vs. Diode Current (T A = 0 °C, V CE = 5.0 V) I C /I F = f (I F ) (TA = 75°C, VCE = 5.0 V) 1 2 3 1 2 3 4 icny17_07 icny17_04 Figure 7. Current Transfer Ratio vs. Diode Current Figure 4. Current Transfer Ratio vs. Diode Current (TA = 25°C, VCE = 5.
PAGE 6
CNY17 Vishay Semiconductors IC = f (VCE) ( IF = 0) ICEO = f (V,T) ( IF = 0) icny17_12 icny17_09 Figure 9. Transistor Characteristics Figure 12. Collector-Emitter off-state Current VCEsat = f (IC) IC = f (VCE) icny17_13 icny17_10 Figure 10. Output Characteristics Figure 13. Saturation Voltage vs Collector Current and Modulation Depth CNY17-1 VF = f (IF) VCEsat = f (IC) icny17_14 icny17_11 Figure 11. Forward Voltage www.vishay.com 6 Figure 14. Saturation Voltage vs.
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CNY17 Vishay Semiconductors VCEsat = f (IC) icny17_15 Figure 15. Saturation Voltage vs. Collector Current and Modulation Depth CNY17-3 V VCEsat = f (IC) icny17_16 Figure 16. Saturation Voltage vs. Collector Current and Modulation Depth CNY17-4 Ptot = f (TA) icny17_18 Figure 17. Permissible Power Dissipation for Transistor and Diode Document Number 83606 Rev. 1.5, 26-Oct-04 www.vishay.
PAGE 8
CNY17 Vishay Semiconductors Package Dimensions in Inches (mm) 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .300 (7.62) typ. .048 (0.45) .022 (0.55) .039 (1.00) Min. .130 (3.30) .150 (3.81) 4° typ. .018 (0.45) .022 (0.55) 18° .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3°–9° .114 (2.90) .130 (3.0) .010 (.25) typ. .300–.347 (7.62–8.81) i178004 Option 6 Option 7 Option 9 0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4) 0.300 (7.
PAGE 9
CNY17 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
PAGE 10
Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document.