Datasheet

ManualsBrandsVISHAY ManualsDiodesZener diode Enclosure type (semiconductors) DO 219AB Zener voltage 15 V Max. power (P total) 800

BZD27C3V6P to BZD27C200P

www.vishay.com

Vishay Semiconductors

Rev. 2.1, 29-Nov-11

Document Number: 85810

For technical questions within your region: DiodesAmericas@vishay.com

, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Zener Diodes with Surge Current Specification

FEATURES

• Sillicon planar Zener diodes

• Low profile surface-mount package

• Zener and surge current specification

• Low leakage current

• Excellent stability

• High temperature soldering: 260 °C/10 s at terminals

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Notes

(1)

Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)

(2)

= 25 °C prior to surge

PRIMARY CHARACTERISTICS

PARAMETER VALUE UNIT

range nom. 3.6 to 200 V

Test current I

5 to 100 mA

specification Pulse current

Int. construction Single

ORDERING INFORMATION

DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY

BZD27C3V6P to BZD27C200P

BZD27C3V6P to

BZD27C200P-series-GS08

3000 per 7" reel (8 mm tape) 15 000/box

BZD27C3V6P to BZD27C200P

BZD27C3V6P to

BZD27C200P-series-GS18

10 000 per 13" reel (8 mm tape) 10 000/box

PACKAGE

PACKAGE NAME WEIGHT

MOLDING COMPOUND

FLAMMABILITY RATING

MOISTURE SENSITIVITY

LEVEL

SOLDERING

CONDITIONS

DO-219AB (SMF) 15 mg UL 94 V-0

MSL level 1

(according J-STD-020)

260 °C/10 s at terminals

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Power dissipation

= 80 °C P

tot

2300 mW

= 25 °C

(1)

tot

800 mW

Non repetitive peak surge power

dissipation

(2)

100 μs square pulse P

ZSM

300 W

10/1000 μs waveform

(BZD27-C7V5P to BZD27-C100P)

RSM

150 W

10/1000 μs waveform

(BZD27-C100P to BZD27-C200P)

RSM

100 W

Junction to lead R

thJL

30 K/W

Junction to ambient air

Mounted on epoxy-glass PCB with 3 mm x

3 mm Cu pads ( 40 μm thick)

thJA

180 K/W

Junction temperature T

150 °C

Storage temperature range T

stg

- 55 to + 150 °C

Summary of content (7 pages)

PAGE 1
BZD27C3V6P to BZD27C200P www.vishay.com Vishay Semiconductors Zener Diodes with Surge Current Specification FEATURES • Sillicon planar Zener diodes • Low profile surface-mount package • Zener and surge current specification • Low leakage current • Excellent stability • High temperature soldering: 260 °C/10 s at terminals • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 3.
PAGE 2
BZD27C3V6P to BZD27C200P www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PART NUMBER ZENER VOLTAGE RANGE (1) TEST CURRENT VZ at IZT1 IZT1 V mA MARKING CODE MIN. NOM. MAX. 3.6 3.8 REVERSE CURRENT DYNAMIC RESISTANCE TEMPERATURE COEFFICIENT IR at VR ZZ at IZT1 VZ at IZT1 μA MAX. 100 100  V 1 %/°C TYP. MAX. MIN. MAX. 4 8 - 0.14 - 0.04 BZD27C3V6P D0 3.4 BZD27C3V9P D1 3.7 3.9 4.1 100 50 1 4 8 - 0.14 - 0.
PAGE 3
BZD27C3V6P to BZD27C200P www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PART NUMBER ZENER VOLTAGE RANGE TEST CURRENT REVERSE CURRENT CLAMPING VOLTAGE TEMPERATURE COEFFICIENT VZ at IZT1 IZT1 IR at VR VC at IRSM (1) VZ at IZT1 V mA MARKING CODE MIN. NOM. MAX. μA V MAX. V A MAX. %/C MIN. MAX. BZD27C7V5P D8 7 7.5 7.9 100 1500 6.2 11.3 13.3 0 0.07 BZD27C8V2P D9 7.7 8.2 8.7 100 1200 6.8 12.3 12.2 0.03 0.
PAGE 4
BZD27C3V6P to BZD27C200P www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PRSM - Max. Pulse Power Dissipation (W) IF - Forward Current (A) 10 Max. VF Typ. VF 1 0.1 0.6 0.8 17411 1.0 1.2 1.4 160 140 120 100 80 60 40 20 0 1.6 VF - Forward Voltage (V) 0 50 Fig. 1 - Forward Current vs. Forward Voltage 100 150 200 VZnom - Zener Voltage (V) 17414 Fig. 4 - Maximum Pulse Power Dissipation vs. Zener Voltage CD - Typ.
PAGE 5
BZD27C3V6P to BZD27C200P www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): DO219-AB (SMF) 0.85 (0.033) 0 (0.000) 0.1 (0.004) 5 5 0.05 (0.002) 1.7 (0.067) Detail Z enlarged 1.2 (0.047) 0.8 (0.031) 0.25 (0.010) 1.9 (0.075) 0.35 (0.014) 1.08 (0.043) 2.9 (0.114) 0.88 (0.035) 2.7 (0.106) 3.9 (0.154) 3.5 (0.138) Foot print recommendation: Created - Date: 15. February 2005 Rev. 3 - Date: 13. March 2007 Document no.:S8-V-3915.01-001 (4) 1.3 (0.051) 1.4 (0.055) 1.
PAGE 6
BZD27C3V6P to BZD27C200P www.vishay.com Vishay Semiconductors Blistertape Dimensions for SMF in millimeters PS Document-No.: S8-V-3717.02-001 (3) 18513 Rev. 2.1, 29-Nov-11 Document Number: 85810 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.
PAGE 7
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