Datasheet

1997 Nov 24 4
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV28 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.20
For more information please refer to the
“General Part of associated Handbook” .
C
d
diode capacitance f = 1 MHz; V
R
=0;
see Figs 17, 18 and 19
BYV28-50 to 200 − 190 − pF
BYV28-300 and 400 − 150 − pF
BYV28-500 and 600 − 125 − pF
maximum slope of reverse
recovery current
when switched from
I
F
=1AtoV
R
≥30 V and
dI
F
/dt = −1A/µs; see Fig.21
−− 4A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
R
th j-a
thermal resistance from junction to ambient note 1 75 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dI
R
dt
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