DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYV28 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 02 1997 Nov 24
Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV28 series FEATURES DESCRIPTION • Glass passivated Rugged glass SOD64 package, using a high temperature alloyed construction. • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack • Also available with preformed leads for easy insertion.
Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL IFRM IFRM BYV28 series PARAMETER repetitive peak forward current CONDITIONS MIN. MAX.
Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL Cd PARAMETER diode capacitance CONDITIONS MIN. TYP. f = 1 MHz; VR = 0; see Figs 17, 18 and 19 MAX. UNIT − 190 − pF BYV28-300 and 400 − 150 − pF BYV28-500 and 600 − 125 − pF − − 4 A/µs BYV28-50 to 200 dI R -------dt BYV28 series maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.
Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV28 series GRAPHICAL DATA MGA868 4 MGK640 5 handbook, halfpage handbook, halfpage IF(AV) I F(AV) (A) (A) 20 15 10 lead length (mm) 4 lead length 10 mm 3 3 2 2 1 1 0 0 100 Ttp (o C) 0 200 BYV28-50 to 400 a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Fig.2 100 0 Ttp (°C) 200 BYV28-500 and 600 a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Fig.
Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV28 series MLC212 40 handbook, full pagewidth I FRM (A) δ = 0.05 30 0.1 20 0.2 10 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV28-50 to 400 Ttp = 85°C; Rth j-tp = 25 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV28 series MLC213 20 handbook, full pagewidth I FRM (A) δ = 0.05 16 12 0.1 8 0.2 4 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYV28-50 to 400 Tamb = 60 °C; Rth j-a = 75 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV28 series MGA871 4.8 P (W) a=3 P (W) a=3 4.0 MGK644 5 handbook, halfpage handbook, halfpage 2.5 2 1.57 2.5 2 1.57 1.42 4 1.42 3.2 3 2.4 2 1.6 1 0.8 0 0 0 2 I F(AV) (A) 4 BYV28-50 to 400 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. 1 2 3 IF(AV)(A) 4 BYV28-500 and 600 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.
Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV28 series MGC521 10 MGK646 10 IF handbook, halfpage handbook, halfpage IF (A) (A) 8 8 6 6 4 4 2 2 0 0 1 0 2 V F (V) BYV28-300 and 400 Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. 0 1 VF (V) 2 BYV28-500 and 600 Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Fig.14 Forward current as a function of forward voltage; maximum values. Fig.
Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV28 series MGC520 - 1 102 handbook, halfpage MGK647 102 handbook, halfpage Cd (pF) Cd (pF) 10 10 1 10 10 2 VR (V) 10 1 3 BYV28-300 and 400 f = 1 MHz; Tj = 25 °C. 1 102 10 VR (V) 103 BYV28-500 and 600 f = 1 MHz; Tj = 25 °C. Fig.18 Diode capacitance as a function of reverse voltage; typical values. Fig.19 Diode capacitance as a function of reverse voltage; typical values.
Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers handbook, full pagewidth BYV28 series IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.22 Test circuit and reverse recovery time waveform and definition.
Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers PACKAGE OUTLINE BYV28 series Hermetically sealed glass package; axial leaded; 2 leads SOD64 (1) k D G L a b L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G max. L min. mm 1.35 4.5 5.0 28 0 2.5 5 mm scale Note 1. The marking band indicates the cathode.
Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV28 series NOTES 1997 Nov 24 13
Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV28 series NOTES 1997 Nov 24 14
Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV28 series NOTES 1997 Nov 24 15
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