Datasheet

BYS11-90
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Vishay General Semiconductor
Revision: 02-Aug-13
3
Document Number: 86014
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Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
V
R
= 0 V, Half Sine-Wave
R
thJA
= 25 K/W
100 K/W
125 K/W
150 K/W
0 40 80 120 160 200
2.0
1.6
1.2
0.8
0.4
0
Ambient Temperature (°C)
Average Forward Current (A)
V
R
= V
RRM
0 40 80 120 160 200
1000
100
10
1
0.1
Junction Temperature (°C)
Reverse Current (mA)
R
thJA
= 25 K/W
100 K/W
V
R
= V
RRM
0 40 80 120 100 200
2.0
1.6
1.2
0.8
0.4
0
Max. Reverse Power Dissipation (W)
Junction Temperature (°C)
f = 1 MHz
0.1 1 10 100
Reverse Voltage (V)
180
160
140
120
100
80
60
40
20
0
Diode Capacitance (pF)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)