Datasheet

BYG23M
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Vishay General Semiconductor
Revision: 19-Feb-15
3
Document Number: 88962
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RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Max. Forward Current vs. Forward Voltage
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 3 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
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0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.1
1
10
100
Forward Voltage (V)
Forward Current (A)
T
J
= 150 °C
T
J
= 25 °C
0
0.2
0.4
0.6
0.
8
1.0
1.2
1.4
1.6
V
R
= V
RRM
Half Sine-Wave
R
θJA
= 25 K/W
R
θJA
= 150 K/W
1007550250 125 150
Ambient Temperature (°C)
Average Forward Cu
rrent (A)
R
θJA
= 125 K/W
0
20
40
60
80
100
120
140
160
25 50 75 100 125 150
100 %
Reverse Power Dissipation (mW)
Junction Temperature (°C)
V
R
= V
RRM
R
θJA
= 125 K/W
R
θJA
= 175 K/W
80 %
1
10
100
1000
25 50 75 100 125 150
Reverse Current (µA)
Junction Temperat
u
re (°C)
V
R
= V
RRM
0
2
4
6
8
10
12
14
16
18
20
22
24
26
0.1 1 10 100
f = 1 MHz
T
J
= 25 °C
Reverse Voltage (V)
Diode Capacitance (pF)