Datasheet

BYG23M
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
1
Document Number: 88962
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Avalanche SMD Rectifier
FEATURES
Low profile package
Ideal for automated placement
Glass passivated pallet chip junction
Low reverse current
High reverse voltage
Ultra fast reverse recovery time
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.5 A
V
RRM
1000 V
I
FSM
30 A
I
R
5.0 μA
t
rr
75 ns
V
F
1.7 V
E
R
20 mJ
T
J
max. 150 °C
Package DO-214AC (SMA)
Diode variations Single die
DO-214AC (SMA)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG23M UNIT
Device marking code BYG23M
Maximum repetitive peak reverse voltage V
RRM
1000 V
Average forward current at T
A
= 65 °C I
F(AV)
1.5 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
30 A
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I
(BR)R
= 1 A, T
J
= 25 °C
E
R
20 mJ
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C

Summary of content (5 pages)