Datasheet

BYG22A, BYG22B, BYG22D
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Vishay General Semiconductor
Revision: 19-Feb-15
3
Document Number: 88959
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RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Max. Reverse Recovery Time vs. Forward Current
0.001
0.01
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Forward Voltage (V)
Forward Current (A)
T
J
= 150 °C
T
J
= 25 °C
0
0.5
1.0
1.5
2.0
2.5
V
R
= V
RRM
Half Sine-Wave
Ambient Temperature (°C)
Average Forward Current (A)
100806040200 120 140 160
R
θJA
≤ 25 K/W
R
θJA
≤ 125 K/W
R
θJA
≤ 150 K/W
1
10
100
25 50 75 100 125 150
Reverse Current (µA)
Junction Temperat
u
re (°C)
V
R
= V
RRM
P
R
- Limit
at 100 % V
R
0
10
20
30
40
50
25 50 75 100 125 150
Reverse Power Dissipation (mW)
Junction Temperature (°C)
V
R
= V
RRM
P
R
- Limit
at 80 % V
R
0
10
20
30
40
50
60
70
0.1 1 10 100
f = 1 MHz
Reverse Voltage (V)
Diode Capacitance (pF)
0
0.2
0.4 0.6 0.8
0
20
40
60
80
140
1.0
100
120
T
A
= 125 °C
I
R
= 0.5 A, i
R
= 0.125 A
Reverse Recovery Time (ns)
Forward Current (A)
T
A
= 100 °C
T
A
= 75 °C
T
A
= 25 °C
T
A
= 50 °C