Datasheet

BYG21K-E3/HE3, BYG21M-E3/HE3
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Vishay General Semiconductor
Revision: 21-Aug-13
3
Document Number: 88961
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Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Max. Reverse Recovery Charge vs. Forward Current
Fig. 7 - Thermal Response
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1
10
100
25 50 75 100 125 150
Reverse Current (µA)
Junction Temperat
u
re (°C)
V
R
= V
RRM
0
20
40
60
80
100
120
25 50 75 100 125 150
Reverse Power Dissipation (mW)
Junction Temperature (°C)
V
R
= V
RRM
P
R
- Limit
at 100 % V
R
P
R
- Limit
at 80 % V
R
0
5
10
15
20
25
0.1 1 10 100
f = 1 MHz
Reverse Voltage (V)
Diode Capacitance (pF)
T
A
= 125 °C
0
50
100
150
200
0 0.2 0.4 0.6 0.8 1.0
Reverse Recovery Charge (nC)
Forward Current (A)
T
A
= 100 °C
T
A
= 25 °C
T
A
= 75 °C
T
A
= 50 °C
I
R
= 0.5 A, i
R
= 0.125 A
1
10
100
1000
Thermal Resistance for Pulse Cond. (K/W)
Pulse Length (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
125 K/W DC
t
p
/T = 0.5
t
p
/T = 0.2
t
p
/T = 0.1
t
p
/T = 0.05
t
p
/T = 0.02
t
p
/T = 0.01