Datasheet

BYG20D, BYG20G, BYG20J
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Vishay General Semiconductor
Revision: 19-Feb-15
3
Document Number: 88958
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RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Reverse Recovery Time vs. Forward Current
0.001
0.01
0.1
1
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Forward Voltage (V)
Forward Current (A)
T
J
= 25 °C
T
J
= 150 °C
0
0.2
0.4
0.6
0.
8
1.0
1.2
1.4
1.6
100806040200 120 140 160
Ambient Temperature (°C)
Average Forward Cu
rrent (A)
V
R
= V
RRM
Half Sine-Wave
R
θJA
≤ 25 K/W
R
θJA
≤ 125 K/W
R
θJA
≤ 150 K/W
1
10
100
25 50 75 100 125 150
Reverse Current (µA)
Junction Temperature (°C)
V
R
= V
RRM
P
R
- Limit
at 100 % V
R
0
10
20
30
40
70
25 50 75 100 125 150
Reverse Power Dissipation (mW)
Junction Temperature (°C)
V
R
= V
RRM
P
R
- Limit
at 80 % V
R
50
60
0
5
10
15
20
25
30
0.1 1 10 100
f = 1 MHz
Reverse Voltage (V)
Diode Capacitance (pF)
0 0.2 0.4 0.6 0.8
0
100
200
300
400
600
1.0
500
I
R
= 0.5 A, i
R
= 0.125 A
Reverse Recovery Time (ns)
Forward Current (A)
T
A
= 125 °C
T
A
= 100 °C
T
A
= 75 °C
T
A
= 25 °C
T
A
= 50 °C