Datasheet

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Document Number: 83690
194 Rev. 1.5, 07-May-08
BRT21/BRT22/BRT23
Vishay Semiconductors
Optocoupler, Phototriac Output,
Zero Crossing
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
INPUT
Reverse voltage I
R
= 10 µA V
R
6.0 V
Forward current I
F
60 mA
Surge current I
FSM
2.5 A
Power dissipation P
diss
100 mW
Derate from 25 °C 1.33 mW/°C
OUTPUT
Peak off-state voltage I
D(RMS)
= 70 µA
BRT21 V
DM
400 V
BRT22 V
DM
600 V
BRT23 V
DM
800 V
RMS on-state current I
TM
300 mA
Single cycle surge current 3.0 A
Power dissipation P
diss
600 mW
Derate from 25 °C 6.6 mW/°C
COUPLER
Isolation test voltage
(between emitter and detector, climate
per DIN 500414, part 2, Nov. 74)
t = 1.0 min V
ISO
5300 V
RMS
Pollution degree (DIN VDE 0109) 2
Creepage distance ≥ 7.0 mm
Clearance distance ≥ 7.0 mm
Comparative tracking index per
DIN IEC 112/VDE 0303 part 1,
group IIIa per DIN VDE 6110
CTI ≥ 175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
Storage temperature range T
stg
- 40 to + 100 °C
Ambient temperature range T
amb
- 40 to + 100 °C
Soldering temperature
(2)
max. ≤ 10 s dip soldering
≥ 0.5 mm from case bottom
T
sld
260 °C
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 10 mA V
F
1.16 1.35 V
Reverse current V
R
= 6 V I
R
0.1 10 µA
Capacitance f = 1 MHz, V
F
= 0 V C
O
25 pF
Thermal resistance, junction to
ambient
R
thJA
750 K/W