Datasheet

BRT11, BRT12, BRT13
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 02-Dec-11
3
Document Number: 83689
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(1)
Static air, SITAC soldered in PCB or base plate.
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Typical Trigger Delay Time Fig. 2 - Power Dissipation 60 Hz to 60 Hz Line Operation
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 10 mA V
F
1.1 1.35 V
Reverse current V
R
= 6 V I
R
10 μA
Thermal resistance,
junction to ambient
(1)
R
thJA
750 °C/W
OUTPUT
Peak off-state voltage I
D(RMS)
= 100 μA
BRT11
V
DM
400 μA
BRT12 600 μA
BRT13 800 μA
Off-state current T
C
= 80 °C, V
DRM
I
D
0.5 100 μA
On-state voltage I
T
= 300 mA V
T
2.3 V
Pulse current
t
p
5 μs, f = 100 Hz,
dI
tp
/dt 8 A/μs
I
tp
2A
Critical rate of rise of off-state
voltage
V
D
= 0.67 V
DRM
, T
j
= 25 °C dV/dt
cr
10 kV/μs
V
D
= 0.67 V
DRM
, T
j
= 80 °C dV/dt
cr
5kV/μs
Critical rate of rise of voltage at
current commutation
V
D
= 0.67 V
DRM
, T
j
= 25 °C,
dI/dt
crq
15 A/ms
dV/dt
crq
10 kV/μs
V
D
= 0.67 V
DRM
, T
j
= 80 °C,
dI/dt
crq
15 A/ms
dV/dt
crq
5kV/μs
Critical rate of rise of on-state at
current
dI/dt
cr
8A/μs
Holding current V
D
= 10 V I
H
80 500 μA
Thermal resistance, junction to
ambient
R
thJA
125 °C/W
COUPLER
Trigger current
V
D
= 10 V, F - versions I
FT
1.2 mA
V
D
= 10 V, H - versions I
FT
0.4 2 mA
V
D
= 10 V, M - versions I
FT
0.8 3 mA
Trigger current temperature
gradient
ΔI
FT
/ΔT
j
714μA/°C
Capacitance (input to output) f = 1 MHz, V
R
= 0 V C
IO
2pF
t
gd
= f(IF/IFT25 °C)
V
D
= 200 V
10
0
5
10
1
10
2
5
10
0
5
10
1
5
10
2
10
3
I
F
/I
FT25°C
17239
t
gd
TJ = 25°C
100°C
17240
P
tot
=
(ITRMS
)
0
100
200
mA 300
/
TRMS
0.2
0.3
0.1
0.0
0.4
0.5
W
0.6
P
tot
180°
120°
90°
60°
30°