Datasheet

BRT11, BRT12, BRT13
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 02-Dec-11
2
Document Number: 83689
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Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Test AC voltage in accordance with DIN 57883, June 1980.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
Forward current I
F
20 mA
Surge forward current I
FSM
1.5 A
Power dissipation t ≤ 10 μs P
diss
30 mW
OUTPUT
Repetitive peak off-state voltage
BRT11 V
DRM
400 V
BRT12 V
DRM
600 V
BRT13 V
DRM
800 V
RMS on-state current I
TRMS
300 mA
Single cycle surge current 50 Hz I
TSM
3A
Power dissipation P
diss
600 mW
COUPLER
Maximum power dissipation P
tot
630 mW
Isolation test voltage
(between emitter and detector, climate
per DIN 500414, part 2, Nov. 74)
(1)
V
ISO
5300 V
RMS
Reference voltage in accordance
with VDE 0110 b
V
ref
500 V
RMS
Reference voltage in accordance
with VDE 0110 b (insulation group C)
V
ref
600 V
DC
Creepage distance ≥ 7.2 mm
Clearance distance ≥ 7.2 mm
Comparative tracking index per
DIN IEC 112/VDE 0303 part 1
group IIIa according to
DIN VDE 0109
CTI ≥ 175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
Storage temperature range T
stg
- 40 to + 150 °C
Ambient temperature range T
amb
- 40 to + 100 °C