Datasheet

BRT11/ 12/ 13
Document Number 83689
Rev. 1.4, 11-Apr-05
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
2)
Static air, SITAC soldered in pcb or base plate.
Output
2)
Static air, SITAC soldered in pcb or base plate.
Coupler
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
F
= 10 mA V
F
1.1 1.35 V
Reverse current V
R
= 6 V I
R
10 µA
Thermal resistance
2)
junction - ambient
R
thja
750 °C/W
Parameter Test condition Symbol Min Ty p. Max Unit
Critical rate of rise of off-state
voltage
V
D
= 0.67 V
DRM
, T
J
= 25 °C dV/dt
cr
10 kV/µs
V
D
= 0.67 V
DRM
, T
J
= 80 °C dV/dt
cr
5kV/µs
Critical rate of rise of voltage at
current commutation
V
D
= 0.67 V
DRM
, T
J
= 25 °C,
dI/dt
crq
≤ 15 A/ms
dV/dt
crq
10 kV/µs
V
D
= 0.67 V
DRM
, T
J
= 80 °C,
dI/dt
crq
≤ 15 A/ms
dV/dt
crq
5kV/µs
Critical rate of rise of on-state
current
dI/dt
cr
8A/µs
Pulse current t
p
≤ 5 µs, f 0 100 Hz,
dI
tp
/dt ≤ 8 A/µs
I
tp
2A
On-state voltage I
T
= 300 mA V
T
2.3 V
Off-state current T
C
= 80 °C, V
DRM
I
D
0.5 100 µA
Holding current V
D
= 10 V I
H
80 500 µA
Thermal resistance
2)
junction -
ambient
R
thJA
R
thja
125 °C/W
Parameter Test condition Symbol Min Ty p. Max Unit
Trigger current V
D
= 10 V, F - Versions I
FT
1.2 mA
V
D
= 10 V, H - Versions I
FT
0.4 2 mA
V
D
= 10 V, M - Versions I
FT
0.8 3 mA
Trigger current temperature
gradient
∆I
FT
/∆T
j
714µA/°C
Capacitance (input-output) V
R
= 0 V, f = 1 kHz C
IO
2pF