Datasheet

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BPW77N

Vishay Telefunken

1 (6)

Rev. 2, 20-May-99

www.vishay.de • FaxBack +1-408-970-5600

Document Number 81527

Silicon NPN Phototransistor

Description

BPW77N is a very high sensitive silicon NPN epitaxial

planar phototransistor in a standard TO–18 hermeti-

cally sealed metal case.

Its glass lens featuring a viewing angle of ±10

makes

it insensible to ambient straylight.

A base terminal is available to enable biasing and sen-

sitivity control.

Features

Hermetically sealed case

Lens window

Narrow viewing angle ϕ = ± 10

Exact central chip alignment

Base terminal available

High photo sensitivity

Suitable for visible and near infrared radiation

Selected into sensitivity groups

94 8486

Applications

Detector in electronic control and drive circuits

Absolute Maximum Ratings

amb

= 25

Parameter Test Conditions Symbol Value Unit

Collector Base Voltage V

CBO

80 V

Collector Emitter Voltage V

CEO

70 V

Emitter Base Voltage V

EBO

5 V

Collector Current I

50 mA

Peak Collector Current

/T = 0.5, t

10 ms

100 mA

Total Power Dissipation

amb

tot

250 mW

Junction Temperature T

125

Storage Temperature Range T

stg

–55...+125

Soldering Temperature

5 s

260

Thermal Resistance Junction/Ambient R

thJA

400 K/W

Thermal Resistance Junction/Case R

thJC

150 K/W

Summary of content (6 pages)

PAGE 1
BPW77N Vishay Telefunken Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10° makes it insensible to ambient straylight. A base terminal is available to enable biasing and sensitivity control.
PAGE 2
BPW77N Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Voltage Turn–On Time Turn–Off Time Cut–Off Frequency Test Conditions IC = 1 mA Symbol V(BR)CE Min 70 Typ Max Unit V 100 VCEsat 1 6 ±10 850 620...980 0.
PAGE 3
BPW77N C CEO – Collector Emitter Capacitance ( pF ) Vishay Telefunken I ca rel – Relative Collector Current 3.5 3.0 VCE=5V Ee=1mW/cm2 l=950nm 2.5 2.0 1.5 1.0 0.5 0 0 50 BPW77NB 10 BPW77NA 0.1 VCE=5V l=950nm 0.1 mW / cm2 ) 100 10 12 VCE=5V RL=100W l=950nm 10 8 6 ton 4 toff 2 l=950nm Ee=1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 1 0 0.1 mW/cm2 0.05 mW/cm2 1 10 VCE – Collector Emitter Voltage ( V ) Figure 5. Collector Light Current vs. Collector Emitter Voltage Document Number 81527 Rev.
PAGE 4
BPW77N Vishay Telefunken S rel – Relative Sensitivity 0° 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8351 Figure 9. Relative Radiant Sensitivity vs. Angular Displacement www.vishay.de • FaxBack +1-408-970-5600 4 (6) Document Number 81527 Rev.
PAGE 5
BPW77N Vishay Telefunken Dimensions in mm 96 12180 Document Number 81527 Rev. 2, 20-May-99 www.vishay.
PAGE 6
BPW77N Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.