Datasheet

BPV11F
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 03-May-13
2
Document Number: 81505
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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature


BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature
0
40
80
120
160
200
P
V
- Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
100806040200
94 8300
R
thJA
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage I
C
= 1 mA V
(BR)CEO
70 V
Collector emitter dark current V
CE
= 10 V, E = 0 I
CEO
150nA
DC current gain V
CE
= 5 V, I
C
= 5 mA, E = 0 h
FE
450
Collector emitter capacitance V
CE
= 0 V, f = 1 MHz, E = 0 C
CEO
15 pF
Collector base capacitance V
CE
= 0 V, f = 1 MHz, E = 0 C
CBO
19 pF
Collector light current E
e
= 1 mW/cm
2
,  = 950 nm, V
CB
= 5 V I
ca
39 mA
Angle of half sensitivity  ± 15 deg
Wavelength of peak sensitivity 
p
930 nm
Range of spectral bandwidth 
0.5
900 to 980 nm
Collector emitter saturation voltage E
e
= 1 mW/cm
2
,  = 950 nm, I
C
= 1 mA V
CEsat
130 300 mV
Turn-on time V
S
= 5 V, I
C
= 5 mA, R
L
= 100  t
on
6μs
Turn-off time V
S
= 5 V, I
C
= 5 mA, R
L
= 100  t
off
5μs
Cut-off frequency V
S
= 5 V, I
C
= 5 mA, R
L
= 100  f
c
110 kHz
94 8249
20
I
CEO
- Collector Dark Current (nA)
100
40 60 80
T
amb
- Ambient Temperature (°C)
10
10
1
10
2
10
3
10
4
V
CE
= 10 V
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80
100
1.6
1.8
λ
94 8239
T
amb
- Ambient Temperature (°C)
I
ca rel
- Relative Collector Current
V
CE
= 5 V
E
e
= 1 mW/cm
2
= 950 nm