Datasheet

BPV11F
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 03-May-13
1
Document Number: 81505
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon NPN Phototransistor
DESCRIPTION
BPV11F is a silicon NPN phototransistor with high radiant
sensitivity in black, T-1¾ plastic package with base terminal
and daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times
• Angle of half sensitivity:  = ± 15°
• Base terminal connected
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Detector for industrial electronic circuitry, measurement
and control
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
12784
PRODUCT SUMMARY
COMPONENT I
ca
(mA)  (deg) 
0.5
(nm)
BPV11F 9 ± 15 900 to 980
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPV11F Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector base voltage V
CBO
80 V
Collector emitter voltage V
CEO
70 V
Emitter base voltage V
EBO
5V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
 10 ms I
CM
100 mA
Power dissipation T
amb
 47 °C P
V
150 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature t  5 s, 2 mm from body T
sd
260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm
2
R
thJA
350 K/W