Datasheet

www.vishay.com
2
Document Number 81503
Rev. 1.6, 07-Mar-07
BPV10NF
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Typical Characteristics
T
amb
= 25 °C unless otherwise specified
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage
I
F
= 50 mA V
F
11.3V
Breakdown voltage
I
R
= 100 µA, E = 0 V
(BR)
60 V
Reverse dark current
V
R
= 20 V, E = 0 I
ro
15nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
11 pF
Parameter Test condition Symbol Min Typ. Max Unit
Open circuit voltage
E
e
= 1 mW/cm
2
, λ = 870 nm
V
o
450 mV
Short circuit current
E
e
= 1 mW/cm
2
, λ = 870 nm
I
k
50 µA
Reverse light current
E
e
= 1 mW/cm
2
, λ = 870 nm,
V
R
= 5 V
I
ra
55 µA
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
R
= 5 V
I
ra
30 60 µA
Temp. coefficient of I
ra
E
e
= 1 mW/cm
2
, λ = 870 nm,
V
R
= 5 V
TK
Ira
- 0.1 %/K
Absolute spectral sensitivity
V
R
= 5 V, λ = 870 nm
s(λ) 0.55 A/W
Angle of half sensitivity ϕ ± 20 deg
Wavelength of peak sensitivity
λ
p
940 nm
Range of spectral bandwidth
λ
0.5
790 to 1050 nm
Quantum efficiency λ = 950 nm η 70 %
Noise equivalent power
V
R
= 20 V, λ = 950 nm
NEP
3 x 10
-14
W/√ Hz
Detectivity
V
R
= 20 V, λ = 950 nm
D
*
3 x 10
12
cm√Hz/W
Rise time
V
R
= 50 V, R
L
= 50 Ω, λ = 820 nm t
r
2.5 ns
Fall time
V
R
= 50 V, R
L
= 50 Ω, λ = 820 nm t
f
2.5 ns
Figure 1. Reverse Dark Current vs. Ambient Temperature
20 40 60 80
1
10
100
1000
I–Reverse Dark Current (nA)
ro
T
amb
–Ambient Temperature (°C)
100
94 8436
V
R
= 20 V
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
020406080
0.6
0.8
1.0
1.2
1.4
I – RelativeReverse Light Current
ra rel
T
amb
–Ambient Temperature (°C)
100
94 8621
V
R
= 5 V
E
e
=1 mW/cm
2
λ = 870 nm