Datasheet

ManualsBrandsVishay ManualsIR PhotodiodesIR-photodiode 940nm, T-1 3/4 5 mm

BPV10NF

Document Number 81503

Rev. 1.6, 07-Mar-07

Vishay Semiconductors

www.vishay.com

16140

High Speed Silicon PIN Photodiode

Description

BPV10NF is a high sensitive and wide bandwidth PIN

photodiode in a standard T-1¾ plastic package. The

black epoxy is an universal IR filter, spectrally matched

to GaAs (

= 950 nm) and GaAlAs (

= 870 nm) IR

emitters.

BPV10NF is optimized for serial infrared links accord-

ing to the IrDA standard.

Features

• Extra fast response times

• High modulation bandwidth: f

> 100 MHz

• High radiant sensitivity

• Radiant sensitive area: A = 0.78 mm

• Low junction capacitance

• Standard T-1¾ (∅ 5 mm) package with IR band-

pass filter

• Angle of half sensitivity: ϕ = ± 20°

• Lead (Pb)-free component in accordance with

RoHS 2002/95/EC and WEEE 2002/96/EC

Applications

Infrared high speed remote control and free air trans-

mission systems with high modulation frequencies or

high data transmission rate requirements, especially

for direct point to point links.

BPV10NF is ideal for the design of transmission sys-

tems according to IrDA requirements and for carrier

frequency based systems (e.g. ASK/FSK- coded,

450 kHz or 1.3 MHz). Recommended emitter diodes

are TSHF5... series or TSFF5... series.

Absolute Maximum Ratings

amb

= 25 °C, unless otherwise specified

Parameter Test condition Symbol Value Unit

Reverse voltage

60 V

Power dissipation

amb

≤ 25 °C P

215 mW

Junction temperature

100 °C

Operating temperature range

amb

- 40 to + 100 °C

Storage temperature range

stg

- 40 to + 100 °C

Soldering temperature 2 mm from body, t ≤ 5 s

260 °C

Thermal resistance junction/

ambient

thJA

350 K/W

Summary of content (6 pages)

PAGE 1
BPV10NF Vishay Semiconductors High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs (λ = 950 nm) and GaAlAs (λ = 870 nm) IR emitters. BPV10NF is optimized for serial infrared links according to the IrDA standard.
PAGE 2
BPV10NF Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward voltage IF = 50 mA Breakdown voltage IR = 100 µA, E = 0 Reverse dark current VR = 20 V, E = 0 Diode capacitance VR = 0 V, f = 1 MHz, E = 0 Symbol Min Typ. Max Unit 1 1.
PAGE 3
BPV10NF Vishay Semiconductors S(λ)rel - Relative Spectral Sensivity Ira – Reverse Light Current (µ A) 1000 100 10 VR = 5 V λ = 870 nm 1 0.1 0.01 0.1 10 1 E e – Irradiance (mW/cm2) 94 8622 1.2 1.0 0.8 0.6 0.4 0.2 0.0 750 850 Figure 3. Reverse Light Current vs. Irradiance 950 1150 Figure 6. Relative Spectral Sensitivity vs. Wavelength 0° 100 Ira – Reverse Light Current (µA) 1050 λ - Wavelength (nm) 94 8426 10° 20° 30° Srel - Relative Sensitivity 1 mW/cm2 0.5 mW/cm2 2 10 0.
PAGE 4
BPV10NF Vishay Semiconductors Package Dimensions in millimeters 96 12198 www.vishay.com 4 Document Number 81503 Rev. 1.
PAGE 5
BPV10NF Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
PAGE 6
Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document.