Datasheet

BAW56
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 13-Feb-18
2
Document Number: 85549
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Peak Forward Current I
FM
= f (t
p
)
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 1 mA V
F
0.715 V
I
F
= 10 mA V
F
0.855 V
I
F
= 50 mA V
F
1V
I
F
= 150 mA V
F
1.25 V
Reverse current
V
R
= 70 V I
R
2500 nA
V
R
= 70 V, T
j
= 150 °C I
R
100 μA
V
R
= 25 V, T
j
= 150 °C I
R
30 μA
Diode capacitance V
F
= V
R
= 0 V, f = 1 MHz C
D
2pF
Reverse recovery time
I
F
= 10 mA to i
R
= 1 mA,
V
R
= 6 V, R
L
= 100 
t
rr
6ns
I - Forward Current (mA)
0.01
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
-
Forward Voltage (V)
14356
F
T
j
= 100 °C
25 °C
22290
10
2
10
1
10
-1
10
-2
10
-5
10
-6
10
-3
10
-4
10
-1
10
-2
10
-0
10
0
/
FM
t
s
D = 0.005
0.01
0.02
0.05
0.1
0.2
t
p
t
p
D =
T
T