Datasheet

BAW56
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 13-Feb-18
1
Document Number: 85549
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diode, Dual
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MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching dual diode with common anode
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Device on fiberglass substrate, see layout
1
3
2
Available
Models
PARTS TABLE
PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
BAW56
BAW56-E3-08 or BAW56-E3-18
Common anode JD Tape and reel
BAW56-HE3-08 or BAW56-HE3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage
= working peak reverse voltage
= DC blocking voltage
V
R
= V
RRM
70 V
Forward continuous current I
F
250 mA
Non repetitive peak forward current
t
p
= 1 μs I
FSM
2A
t
p
= 1 ms I
FSM
1A
t
p
= 1 s I
FSM
0.5 A
Power dissipation
(1)
P
tot
350 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air R
thJA
430 K/W
Junction temperature T
j
150 °C
Storage temperature range T
stg
-65 to +150 °C
Operating temperature range T
op
-55 to +150 °C