Datasheet

BAV300, BAV301, BAV302, BAV303
www.vishay.com
Vishay Semiconductors
Rev. 2.2, 12-Jul-17
2
Document Number: 85545
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THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
Mounted on epoxy-glass
hard tissue, fig. 4
35 μm copper clad, 0.9 mm
2
copper area per electrode
R
thJA
500 K/W
Junction temperature T
j
175 °C
Storage temperature range T
stg
-65 to +175 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 100 mA V
F
1V
Reverse current
V
R
= 50 V BAV300 I
R
100 nA
V
R
= 100 V BAV301 I
R
100 nA
V
R
= 150 V BAV302 I
R
100 nA
V
R
= 200 V BAV303 I
R
100 nA
T
j
= 100 °C, V
R
= 50 V BAV300 I
R
15 μA
T
j
= 100 °C, V
R
= 100 V BAV301 I
R
15 μA
T
j
= 100 °C, V
R
= 150 V BAV302 I
R
15 μA
T
j
= 100 °C, V
R
= 200 V BAV303 I
R
15 μA
Breakdown voltage
I
R
= 100 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
BAV300 V
(BR)
60 V
BAV301 V
(BR)
120 V
BAV302 V
(BR)
200 V
BAV303 V
(BR)
250 V
Diode capacitance V
R
= 0 V, f = 1 MHz C
D
1.5 pF
Differential forward resistance I
F
= 10 mA r
f
5 Ω
Reverse recovery time
I
F
= I
R
= 30 mA, i
R
= 3 mA,
R
L
= 100 Ω
t
rr
50 ns