Datasheet

BAV19WS, BAV20WS, BAV21WS
www.vishay.com
Vishay Semiconductors
Rev. 2.2, 12-Jul-17
3
Document Number: 85726
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Fig. 5 - Leakage Current vs. Junction Temperature Fig. 6 - Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0.1
18862_3
1
10
100
1000
0 40 80 120 160 200
I
R
(T
j
)/I
R
(25 °C) - Leakage Current
T
j
- Junction Temperature (°C)
Reverse Voltage
BAV19WS V
R
= 100 V
BAV20WS V
R
= 150 V
BAV21WS V
R
= 200 V
18863
1100.1
0.8
0.6
0.4
1.4
1.2
1.0
0.2
0
100
C - Diode Capacitance (pF)
D
V
R
- Reverse Voltage (V)
2.0
1.8
1.6
=25
°
CT
j
Rev. 6 - Date: 23.Sept.2016
17443
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Footprint recommendation:
0.6 [0.024]
1.1 [0.043] 1.5 [0.059]
2.50 [0.098]
2.85 [0.112]
1.60 [0.063]
1.95 [0.077]
0° - 8°
0.25 [0.010]
0.40 [0.016]
Cathode bar
0.20 [0.008] 0.40 [0.016]
0.8 [0.031]
0.2 [0.008]
1.15 [0.045]
0.10 [0.004]
0.1 [0.004] max.
0.15 [0.006]
1.6 [0.063]
0.8 [0.031] 0.8 [0.031]