Datasheet

BAV19WS, BAV20WS, BAV21WS
www.vishay.com
Vishay Semiconductors
Rev. 2.2, 12-Jul-17
2
Document Number: 85726
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA V
F
1V
I
F
= 200 mA V
F
1.25 V
Reverse leakage current
V
R
= 100 V BAV19WS I
R
100 nA
V
R
= 100 V, T
J
= 100 °C BAV19WS I
R
15 μA
V
R
= 150 V BAV20WS I
R
100 nA
V
R
= 150 V, T
J
= 100 °C BAV20WS I
R
15 μA
V
R
= 200 V BAV21WS I
R
100 nA
V
R
= 200 V, T
J
= 100 °C BAV21WS I
R
15 μA
Dynamic forward resistance I
F
= 10 mA r
f
5 Ω
Diode capacitance V
R
= 0, f = 1 MHz C
D
1.5 pF
Reverse recovery time
I
F
= 30 mA, I
R
= 30 mA,
i
R
= 3 mA, R
L
= 100 Ω
t
rr
50 ns
18858
1000
100
10
1
0.1
0.01
I - Forward Current (mA)
F
0 0.4 0.6 0.8 10.2
V
F
- Forward Voltage (V)
T
j
= 100 °C
25 °C
0.1
0.2
0.3
0
0 30 60 90 120 150
18859
T
amb
- Ambient Temperature (°C)
I , I - Admissible Forward Current (A)
OF
ICurrent (rectif.)
O
DC current I
F
200
18864
T
amb
- Ambient Temperature (°C)
250
200
150
100
50
20 40 60 80 100 120 140 160 1800
0
P - Admissible Power Dissipation (mW)
tot
r - Dynamic Forward Resistance
f
(Ω)
10
100
1
1 10010
18861
I
F
- Forward Current (mA)