Datasheet

BAV19W, BAV20W, BAV21W
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Vishay Semiconductors
Rev. 1.6, 23-Feb-18
3
Document Number: 85725
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Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
Fig. 5 - Leakage Current vs. Junction Temperature
Fig. 6 - Capacitance vs. Reverse Voltage
Fig. 7 - Non-Repetitive Peak Forward Current vs. Pulse Duration
Maximum Admissible Values of Square Pulse
200
18860
T
amb
- Ambient Temperature (°C)
500
400
300
200
100
40 80 120 1600
0
P
tot
- Admissible Power Dissipation (mW)
r - Dynamic Forward Resistance
f
(Ω)
10
100
1
1 10010
18861
I
F
- Forward Current (mA)
0.1
18862
1
10
100
1000
0 40 80 120 160 200
I
R
(T
j
)/I
R
(25 °C) - Leakage Current
T
j
- Junction Temperature (°C)
Reverse Voltage
BAV19W V
R
= 100 V
BAV20W V
R
= 150 V
BAV21W V
R
= 200 V
18863
1100.1
0.8
0.6
0.4
1.4
1.2
1.0
0.2
0
100
C - Diode Capacitance (pF)
D
V
R
- Reverse Voltage (V)
2.0
1.8
1.6
=25
°
CT
j
1
10
100
0.1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
  
t
p
- Test Pulse (s)
I
FSM
(A)
T
J
= 25 °C - Prior to Surge