Datasheet

BAV19W, BAV20W, BAV21W
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 23-Feb-18
2
Document Number: 85725
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Valid provided that leads are kept at ambient temperature
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Admissible Forward Current vs. Ambient Temperature
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
375 °C/W
Junction temperature
(1)
T
j
150 °C
Storage temperature range
(1)
T
stg
-65 to +150 °C
Operating temperature range T
op
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA V
F
1V
I
F
= 200 mA V
F
1.25 V
Leakage current
V
R
= 100 V BAV19W I
R
100 nA
V
R
= 100 V, T
j
= 100 °C BAV19W I
R
15 μA
V
R
= 150 V BAV20W I
R
100 nA
V
R
= 150 V, T
j
= 100 °C BAV20W I
R
15 μA
V
R
= 200 V BAV21W I
R
100 nA
V
R
= 200 V, T
j
= 100 °C BAV21W I
R
15 μA
Dynamic forward
resistance
I
F
= 10 mA r
f
5 
Diode capacitance V
R
= 0, f = 1 MHz C
D
1.5 pF
Reverse recovery time
I
F
= 30 mA, I
R
= 30 mA,
i
R
= 3 mA, R
L
= 100 
t
rr
50 ns
18858
1000
100
10
1
0.1
0.01
I - Forward Current (mA)
F
0 0.4 0.6 0.8 10.2
V
F
- Forward Voltage (V)
T
j
= 100 °C
25 °C
0.1
0.2
0.3
0
0 30 60 90 120 150
18859
T
amb
- Ambient Temperature (°C)
I , I - Admissible Forward Current (A)
OF
ICurrent (rectif.)
O
DC current I
F