Datasheet

ManualsBrandsVishay ManualsDiodesSwitching Diode 200mA 200V SOD-123

BAV19W, BAV20W, BAV21W

www.vishay.com

Vishay Semiconductors

Rev. 1.6, 23-Feb-18

Document Number: 85725

For technical questions within your region: DiodesAmericas@vishay.com

, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Small Signal Switching Diodes, High Voltage

DESIGN SUPPORT TOOLS

MECHANICAL DATA

Case: SOD-123

Weight: approx. 10.3 mg

Packaging codes / options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 m tape), 15K/box

FEATURES

• Silicon epitaxial planar diodes

• For general purpose

• AEC-Q101 qualified available

• Base P/N-E3 - RoHS-compliant, commercial

grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

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Available

Models

PARTS TABLE

PART

TYPE

DIFFERENTIATION

ORDERING CODE

TYPE

MARKING

CIRCUIT

CONFIGURATION

REMARKS

BAV19W V

= 100 V

BAV19W-E3-08 or BAV19W-E3-18

BAV19W-HE3-08 or BAV19W-HE3-18

A8 Single Tape and reel

BAV20W V

= 150 V

BAV20W-E3-08 or BAV20W-E3-18

BAV20W-HE3-08 or BAV20W-HE3-18

A9 Single Tape and reel

BAV21W V

= 200 V

BAV21W-E3-08 or BAV21W-E3-18

BAV21W-HE3-08 or BAV21W-HE3-18

AA Single Tape and reel

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

Continuous reverse voltage

BAV19W V

100 V

BAV20W V

150 V

BAV21W V

200 V

Repetitive peak reverse voltage

BAV19W V

RRM

120 V

BAV20W V

RRM

200 V

BAV21W V

RRM

250 V

DC Forward current

(1)

250 mA

Rectified current (average) half wave

rectification with resist. load

(1)

F(AV)

200 mA

Repetitive peak forward current

(1)

f  50 Hz,  = 180° I

FRM

625 mA

Surge forward current t < 1 s, T

= 25 °C I

FSM

Power dissipation

(1)

tot

410 mW

Summary of content (5 pages)

PAGE 1
BAV19W, BAV20W, BAV21W www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diodes • For general purpose • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified DESIGN SUPPORT TOOLS • Material categorization: for definitions of compliance please see www.vishay.
PAGE 2
BAV19W, BAV20W, BAV21W www.vishay.
PAGE 3
BAV19W, BAV20W, BAV21W Ptot - Admissible Power Dissipation (mW) www.vishay.com Vishay Semiconductors 1000 IR(Tj)/IR (25 °C) - Leakage Current 500 400 300 200 100 10 40 80 120 160 0.1 0 200 18862 Tamb - Ambient Temperature (°C) 18860 Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 2.0 1.8 CD - Diode Capacitance (pF) 10 10 200 T j = 25 ° C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 1 1 40 80 120 160 Tj - Junction Temperature (°C) Fig. 5 - Leakage Current vs.
PAGE 4
BAV19W, BAV20W, BAV21W www.vishay.com Vishay Semiconductors 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.
PAGE 5
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