Datasheet

BAV200, BAV201, BAV202, BAV203
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 31-Jul-12
2
Document Number: 85544
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Differential Forward Resistance vs. Forward Current
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 100 mA V
F
1V
Reverse current
V
R
= 50 V BAV200 I
R
100 nA
V
R
= 100 V BAV201 I
R
100 nA
V
R
= 150 V BAV202 I
R
100 nA
V
R
= 200 V BAV203 I
R
100 nA
T
j
= 100 °C, V
R
= 50 V BAV200 I
R
15 μA
T
j
= 100 °C, V
R
= 100 V BAV201 I
R
15 μA
T
j
= 100 °C, V
R
= 150 V BAV202 I
R
15 μA
T
j
= 100 °C, V
R
= 200 V BAV203 I
R
15 μA
Breakdown voltage
I
R
= 100 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
BAV200 V
(BR)
60 V
BAV201 V
(BR)
120 V
BAV202 V
(BR)
200 V
BAV203 V
(BR)
250 V
Diode capacitance V
R
= 0, f = 1 MHz C
D
1.5 pF
Differential forward resistance I
F
= 10 mA r
f
5 
Reverse recovery time
I
F
= I
R
= 30 mA, i
R
= 3 mA,
R
L
= 100 
t
rr
50 ns
0 40 80 120 160
0.01
0.1
1
10
1000
I-Reverse Current (µA)
R
T
j
-Junction Temperature (°C)
200
94 9084
100
Scattering Limit
V
R
= V
RRM
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I-Forward Current (mA)
F
V
F
-Forward Voltage (V)
2.0
94 9085
Scattering Limit
T
j
= 25 °C
0.1 1 10
1
10
100
1000
r - Differential Forward Resistance ( )
f
I
F
- Forward Current (mA)
100
94 9089
Ω
T
j
= 25 °C