Datasheet

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2
Document Number 85663
Rev. 1.4, 05-Aug-10
BAT46W-V
Vishay Semiconductors
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Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
1)
Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
2)
Pulse test t
p
< 300 µs, δ < 2 %
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air
R
thJA
300
1)
K/W
Junction temperature
T
j
125 °C
Ambient operating temperature range
T
amb
- 55 to + 125 °C
Storage temperature range
T
stg
- 55 to + 150 °C
Parameter Test condition Symbol Min Typ. Max Unit
Reverse breakdown voltage
I
R
= 100 µA (pulsed) V
(BR)
100 V
Leakage current
2)
V
R
= 1.5 V I
R
0.5 µA
V
R
= 1.5 V, T
j
= 60 °C I
R
5µA
V
R
= 10 V I
R
0.8 µA
V
R
= 10 V, T
j
= 60 °C I
R
7.5 µA
V
R
= 50 V I
R
2µA
V
R
= 50 V, T
j
= 60 °C I
R
15 µA
V
R
= 75 V I
R
5µA
V
R
= 75 V, T
j
= 60 °C I
R
20 µA
Forward voltage
2)
I
F
= 0.1 mA V
F
250 mV
I
F
= 10 mA V
F
450 mV
I
F
= 250 mA V
F
1000 mV
Diode capacitance
V
R
= 0 V, f = 1 MHz C
D
10 pF
V
R
= 1 V, f = 1 MHz C
D
6pF
Figure 1. Typical Instantaneous Forward Characteristics
I - Forward Current (mA)
F
1000
100
10
1
0.1
0.01
1.2 1 0.8 0.6 0.4 0.2 0
18546
V
F
- Forward Voltage (V)
= 60 °CT
j
25 °C
Figure 2. Typical Reverse Characteristics
18547
I- Reverse Leakage Current (µA)
R
0.01
0.1
1
10
100
020406080100
V
R
- Reverse Voltage (V)
T
j
= 60 °C
T
j
= 25 °C