Datasheet

BAS86
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 02-Jun-17
2
Document Number: 85511
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
Fig. 2 - Reverse Current vs. Junction Temperature
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reserve breakdown voltage I
R
= 10 μA (pulsed) V
(BR)
50 V
Leakage current V
R
= 40 V I
R
5μA
Forward voltage
Pulse test t
p
< 300 μs,
I
F
= 0.1 mA,  < 2 %
V
F
200 300 mV
Pulse test t
p
< 300 μs,
I
F
= 1 mA,  < 2 %
V
F
275 380 mV
Pulse test t
p
< 300 μs,
I
F
= 10 mA,  < 2 %
V
F
365 450 mV
Pulse test t
p
< 300 μs,
I
F
= 30 mA,  < 2 %
V
F
460 600 mV
Pulse test t
p
< 300 μs,
I
F
= 100 mA,  < 2 %
V
F
700 900 mV
Diode capacitance V
R
= 1 V, f = 1 MHz C
D
8pF
Reserve recovery time
I
F
= 10 mA, I
R
= 10 mA,
i
R
= 1 mA
t
rr
5ns
15827
0
50
100
150
200
250
300
350
400
450
500
25 50 75 100 125 150
T
j
- Junction Temperature (°C)
P - Reverse Power Dissipation (mW)
R
- Limit
at 100 % V
P
R
R
- Limit
at 80 % V
P
R
R
R
thJA
= 540 K/W
V
R
= 50 V
1
10
100
1000
10000
25 50 75 100 125 150
15828
I - Reverse Current (µA)
R
T
j
- Junction Temperature (°C)
V
R
= V
RRM
15829
0 0.5 1.0 1.5
0.1
1
10
100
1000
I- Forward Current (A)
F
V
F
- Forward Voltage (V)
T
j
= 25 °C
T
j
= 125 °C
15830
0
1
2
3
4
5
6
7
8
9
10
0.1 1 10 100
f = 1 MHz
V
R
- Reverse Voltage (V)
C - Diode Capacitance (pF)
D