Datasheet

2000 May 25 3
Philips Semiconductors Product specification
Schottky barrier diode BAS85
ELECTRICAL CHARACTERISTICS
T
amb
=25°C; unless otherwise specified.
Note
1. Pulsed test: t
p
= 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD80 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage see Fig.3
I
F
= 0.1 mA 240 mV
I
F
= 1 mA 320 mV
I
F
= 10 mA 400 mV
I
F
= 30 mA 500 mV
I
F
= 100 mA 800 mV
I
R
reverse current V
R
= 25 V; note 1; see Fig.4 2.3 µA
C
d
diode capacitance f = 1 MHz; V
R
= 1 V; see Fig.5 10 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 320 K/W