Datasheet

2000 May 25 2
Philips Semiconductors Product specification
Schottky barrier diode BAS85
FEATURES
• Low forward voltage
• High breakdown voltage
• Guard ring protected
• Hermetically-sealed small SMD
package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode with an
integrated protection ring against
static discharges.
This surface mounted diode is
encapsulated in a hermetically sealed
SOD80C glass SMD package with
tin-plated metal discs at each end. It
is suitable for “automatic placement”
and as such it can withstand
immersion soldering.
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
handbook, halfpage
MAM190
ka
Cathode indicated by a grey band.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Refer to SOD80 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
continuous reverse voltage − 30 V
I
F
continuous forward current − 200 mA
I
F(AV)
average forward current V
RWM
= 25 V; a = 1.57; δ = 0.5;
note 1; Fig.2
− 200 mA
I
FRM
repetitive peak forward current t
p
≤ 1s;δ≤0.5 − 300 mA
I
FSM
non-repetitive peak forward current t
p
=10ms − 5A
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 125 °C
T
amb
operating ambient temperature −65 +125 °C