Datasheet

BAS85
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 21-Jan-13
2
Document Number: 85510
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
Fig. 2 - Reverse Current vs. Junction Temperature
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reserve beakdown voltage I
R
= 10 μA (pulsed) V
(BR)
30 V
Leakage current V
R
= 25 V I
R
0.2 2 μA
Forward voltage
Pulse test t
p
< 300 μs,
I
F
= 0.1 mA
V
F
240 mV
Pulse test t
p
< 300 μs, I
F
= 1 mA V
F
320 mV
Pulse test t
p
< 300 μs,
I
F
= 10 mA
V
F
400 mV
Pulse test t
p
< 300 μs,
I
F
= 30 mA
V
F
500 mV
Pulse test t
p
< 300 μs,
I
F
= 100 mA
V
F
800 mV
Diode capacitance V
R
= 1 V, f = 1 MHz C
D
10 pF
Reserve recovery time
I
F
= 10 mA, I
R
= 10 mA,
i
R
= 1 mA
t
rr
5ns
0
20
40
60
80
100
120
140
160
180
200
25 50 75 100 125 150
T
j
- Junction Temperature (°C)
15822
V
R
= 30 V
P
R
- Reverse Power Dissipation (mW)
R
thJA
= 540 kW
P
R
- Limit
at 100 % V
R
P
R
- Limit
at 80 % V
R
0 0.5 1.0 1.5
15824
0.1
1
10
100
1000
T
j
= 125 °C
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
T
j
= 25 °C
1
10
100
1000
25 50 75 100 125 150
15823
V
R
= V
RRM
I
R
- Reverse Current (µA)
T
j
- Junction Temperature (°C)
0
1
2
3
4
5
6
7
8
9
10
0.1 1 10 100
15825
f = 1 MHz
V
R
- Reverse Voltage (V)
C
D
- Diode Capacitance (pF)