Datasheet

BAS85
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 21-Jan-13
1
Document Number: 85510
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
MECHANICAL DATA
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• For general purpose applications
• This diode features low turn-on voltage
• The devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• This diode is also available in a DO-35 case with type
designation BAT85
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Applications where a very low forward voltage is required
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Valid provided that electrodes are kept at ambient temperature
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION REMARKS
BAS85 BAS85-GS18 or BAS85-GS08 Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Continuous reverse voltage V
R
30 V
Forward continuous current
(1)
I
F
200 mA
Peak forward current
(1)
I
FM
300 mA
Surge forward current
(1)
t
p
< 1 s I
FSM
600 mA
Power dissipation
(1)
T
amb
= 65 °C P
tot
200 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
430 K/W
Junction temperature T
j
125 °C
Storage temperature range T
stg
- 55 to + 150 °C