Datasheet

BAS70-02V-V-G
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 01-Jun-17
1
Document Number: 82393
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
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MECHANICAL DATA
Case: SOD-523
Weight: approx. 1.4 mg
Molding compound flammability rating: UL 94 V-0
Terminals: high temperature soldering guaranteed:
260 °C/10 s at terminals
Packaging codes/options:
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• This diode features very low turn-on voltage and
fast switching
• This device is protected by a PN junction guard
ring against excessive voltage, such as
electrostatic discharges
• Space saving SOD-523 package
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
22321
1
2
Available
Models
PARTS TABLE
PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
BAS70-02V-V-G BAS70-02V-V-G-08 Single
.X Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
70 V
Forward continuous current I
F
100 mA
Surge forward current I
FSM
600 mA
Power dissipation P
tot
150 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air R
thJA
680 K/W
Junction temperature T
j
125 °C
Storage temperature range T
stg
-65 to +150 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reserve breakdown voltage I
R
= 10 μA (pulsed) V
(BR)
70 V
Leakage current V
R
= 50 V, t
p
< 300 μs I
R
20 100 nA
Forward voltage
t
p
< 300 μs, I
F
= 1.0 mA V
F
410 mV
t
p
< 300 μs, I
F
= 15 mA V
F
1000 mV
Diode capacitance V
R
= 0 V, f = 1 MHz C
D
1.5 2 pF
Reserve recovery time
I
F
= 10 mA, I
R
= 10 mA,
i
R
= 1 mA, R
L
= 100 Ω
t
rr
5ns