Datasheet

BAS40-02V-V-G
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 01-Jun-17
1
Document Number: 82391
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
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MECHANICAL DATA
Case: SOD-523
Weight: approx. 1.4 mg
Molding compound flammability rating: UL 94 V-0
Terminals: high temperature soldering guaranteed:
260 °C/10 s at terminals
Packaging codes/options:
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• This diode features very low turn-on voltage
and fast switching
• This device is protected by a PN junction guard
ring against excessive voltage, such as
electrostatic discharges
• Space saving SOD-523 package
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
22321
1
2
Available
Models
PARTS TABLE
PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
BAS40-02V-V-G BAS40-02V-V-G-08 Single .W Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
40 V
Forward continuous current I
F
120 mA
Surge forward current I
FSM
600 mA
Power dissipation Pt
ot
150 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air R
thJA
680 K/W
Junction temperature T
j
125 °C
Storage temperature range T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 10 μA (pulsed) V
(BR)
40 V
Leakage current Pulse test V
R
= 30 V, t
p
< 300 μs I
R
20 100 nA
Forward voltage
Pulse test t
p
< 300 μs, I
F
= 1 mA V
F
380 mV
Pulse test t
p
< 300 μs, I
F
= 40 mA V
F
1000 mV
Diode capacitance V
R
= 0 V, f = 1 MHz C
D
45pF
Reverse recovery time I
F
= 10 mA, I
R
= 10 mA, I
rr
= 1 mA, R
L
= 100 Ω t
rr
5ns