Datasheet

BAS386
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 15-May-12
2
Document Number: 85505
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
Fig. 2 - Reverse Current vs. Junction Temperature
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Fig. 5 - Board for R
thJA
Definition (in mm)
15827
0
50
100
150
200
250
300
350
400
450
500
25 50 75 100 125 150
T
j
- Junction Temperature (°C)
P - Reverse Power Dissipation (mW)
R
- Limit
at 100 % V
P
R
R
- Limit
at 80 % V
P
R
R
R
thJA
= 540 K/W
V
R
= 50 V
1
10
100
1000
10000
25 50 75 100 125 150
15828
I - Reverse Current (µA)
R
T
j
- Junction Temperature (°C)
V
R
= V
RRM
15829
0 0.5 1.0 1.5
0.1
1
10
100
1000
I - Forward Current (A)
F
V
F
- Forward Voltage (V)
T
j
= 25 °C
T
j
= 125 °C
15830
0
1
2
3
4
5
6
7
8
9
10
0.1 1 10 100
f = 1 MHz
V
R
- Reverse Voltage (V)
C - Diode Capacitance (pF)
D
25
2.5
10
0.71 1.3
1.27
9.9
24
0.152
0.355
95 10329