Datasheet

BAS385
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 09-May-12
2
Document Number: 85504
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
Fig. 2 - Reverse Current vs. Junction Temperature
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Fig. 5 - Board for R
thJA
Definition (in mm)
0
20
40
60
80
100
120
140
160
180
200
25 50 75 100 125 150
T
j
- Junction Temperature (°C)
15822
V
R
= 30 V
P
R
- Reverse Power Dissipation (mW)
R
thJA
= 540 kW
P
R
- Limit
at 100 % V
R
P
R
- Limit
at 80 % V
R
1
10
100
1000
25 50 75 100 125 150
15823
V
R
= V
RRM
I
R
- Reverse Current (µA)
T
j
- Junction Temperature (°C)
0 0.5 1.0 1.5
15824
0.1
1
10
100
1000
T
j
= 125 °C
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
T
j
= 25 °C
0
1
2
3
4
5
6
7
8
9
10
0.1 1 10 100
15825
f = 1 MHz
V
R
- Reverse Voltage (V)
C
D
- Diode Capacitance (pF)
25
2.5
10
0.71 1.3
1.27
9.9
24
0.152
0.355
95 10329