Datasheet

BAS170WS
www.vishay.com
Vishay Semiconductors
Rev. 2.2, 01-Jun-17
1
Document Number: 85653
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
DESIGN SUPPORT TOOLS click logo to get started
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
Schottky diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
AEC-Q101 qualified available
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Pulse test; t
p
300 μs
Available
Models
PARTS TABLE
PART ORDERING CODE
CIRCUIT
CONFIGURATION
TYPE MARKING REMARKS
BAS170WS
BAS170WS-E3-08 or BAS170WS-E3-18
Single 73 Tape and reel
BAS170WS-HE3-08 or BAS170WS-HE3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
70 V
Forward continuous current I
F
70 mA
Surge forward current t
p
< 1 s I
FSM
600 mA
Power dissipation
(1)
P
tot
200 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
650 K/W
Junction temperature T
j
125 °C
Operating temperature range T
op
-55 to +125 °C
Storage temperature range T
stg
-65 to +150 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 10 μA (pulsed) V
(BR)
70 V
Leakage current
V
R
= 50 V I
R
0.1 μA
V
R
= 70 V I
R
10 μA
Forward voltage
I
F
= 1 mA V
F
375 410 mV
I
F
= 10 mA V
F
705 750 mV
Forward voltage
(1)
I
F
= 15 mA V
F
880 1000 mV
Diode capacitance V
R
= 0 V, f = 1 MHz C
D
1.5 2 pF
Differential forward resistance I
F
= 5 mA, f = 10 kHz r
f
34 Ω

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