Datasheet

BAS16WS
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 13-May-13
2
Document Number: 85752
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Characteristics
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Relative Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 1 mA V
F
0.715 V
I
F
= 10 mA V
F
0.855 V
I
F
= 50 mA V
F
1V
I
F
= 150 mA V
F
1.250 V
Leakage current
V
R
= 25 V, T
J
= 150 °C I
R
30 μA
V
R
= 75 V I
R
1μA
V
R
= 75 V, T
J
= 150 °C I
R
50 μA
Diode capacitance V
R
= 0, f = 1 MHz C
D
2pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA,
i
R
= 1 mA, R
L
= 100 
t
rr
6ns
18105
I
F
(mA)
V
F
(V)
T
j
= 100 °C
T
j
= 25 °C
10
- 2
10
- 1
10
2
10
3
1
10
120
17438
f = 1 kHz
T
j
= 25 °C
I
F
(mA)
R
f
(Ω)
10
10
2
10
3
10
4
10
-2
10
-1
110
2
10
2
5
2
5
2
5
2
5
18185
P
tot
(mW)
T
amb
(°C)
0
100
400
500
200
300
100 2000
17440
V
R
(V)
0.7
0.8
0.9
1.0
1.1
f = 1 MHz
T
j
= 25 °C
2086410
C
D
(V
R
)
C
D
(0 V)