Datasheet

BAS16
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 22-Nov-13
2
Document Number: 85539
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Reverse Current vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 1 mA V
F
0.715 V
I
F
= 10 mA V
F
855 mV
I
F
= 50 mA V
F
1V
I
F
= 150 mA V
F
1.25 V
Reverse current
V
R
= 75 V I
R
1μA
V
R
= 75 V, T
j
= 150 °C I
R
50 μA
V
R
= 25 V, T
j
= 150 °C I
R
30 μA
Diode capacitance V
R
= 0, f = 1 MHz C
D
4pF
Reverse recovery time
I
F
= 10 mA to i
R
= 1 mA,
V
R
= 6 V, R
L
= 100 
t
rr
6ns
I - Forward Current (mA)
0.01
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
-
Forward Voltage (V)
14356
F
T
j
= 100 °C
25 °C
I–Reverse Current (nA)
1
10
100
1000
10000
0 25 50 75 100 125 150 175 200
T
j
–Junction Temperature (°C)
14357
V
R
=20V
R