Datasheet

BAQ333, BAQ334, BAQ335
www.vishay.com
Vishay Semiconductors
Rev. 2.2, 11-Jul-17
2
Document Number: 85538
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Board for R
thJA
Definition (in mm)
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 100 mA V
F
1V
Reverse current
E ≤ 300 lx, rated V
R
I
R
13nA
E ≤ 300 lx, rated V
R
, T
j
= 125 °C I
R
0.5 μA
E ≤ 300 lx, V
R
= 15 V BAQ333 I
R
0.5 1 nA
E ≤ 300 lx, V
R
= 30 V BAQ334 I
R
0.5 1 nA
E ≤ 300 lx, V
R
= 60 V BAQ335 I
R
0.5 1 nA
Breakdown voltage
I
R
= 5 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
BAQ333 V
(BR)
40 V
BAQ334 V
(BR)
70 V
BAQ335 V
(BR)
140 V
Diode capacitance V
R
= 0 V, f = 1 MHz C
D
3pF
04 08 0 120 160
1
10
100
1000
10 000
I- Reverse
C
urrent (nA)
R
T
j
- Junction Temperature (°C)
200
94 9079
Scattering Limit
V
R
=V
RRM
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I- Forward Current (mA)
F
V
F
- Forward Voltage (V)
2.0
94 9078
Scattering Limit
T
j
=2 5 °C
25
2.5
10
0.71 1.3
1.27
9.9
24
0.152
0.355
95 10329