Datasheet

B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM
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Vishay General Semiconductor
Revision: 16-Aug-13
3
Document Number: 88533
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Fig. 5 - Typical Reverse Leakage Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0
20
40
60
80
100
0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 100 °C
T
J
= 25 °C
1
10
100
1
10
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.315 (8.00)
0.285 (7.24)
0.013 (0.33)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
0.075 (1.90)
0.055 (1.39)
0.205 (5.2)
0.195 (5.0)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
0.335 (8.51)
0.320 (8.12)
0.130 (3.30)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)