Datasheet

B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM
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Vishay General Semiconductor
Revision: 16-Aug-13
2
Document Number: 88533
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Note
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Derating Curves Output Rectified Current for
B40C800D...B125C800DM
Fig. 2 - Derating Curves Output Rectified Current for
B250C800D...B360C800DM
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 4 - Typical Forward Characteristics Per Diode
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
B40
C800DM
B80
C800DM
B125
C800DM
B250
C800DM
B380
C800DM
UNIT
Typical thermal resistance
(1)
R
JA
40
°C/W
R
JL
15
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
B380C800DM-E3/45 0.416 45 50 Tube
20
40
60
0.2
0.4
0.6
0.8
1.0
80
100
120
140
0
0
0 - 10 µF
10 - 100 µF
> 100 µF
Capacitive Load
Mounted on P.C.B. with 0.06
"
(1.5 mm) Lead Length
Copper Pads
0.51 x 0.51
" (13 x 13 mm)
50 to 60 Hz
Resistive or Inductive Load
Ambient Temperature (°C)
Average Forward Output Current (A)
60
80
100
140
0
0.2
0.6
0.8
1.0
0.4
0
20
40
120
Capacitive Load
Mounted on P.C.B. with 0.06
"
(1.5 mm) Lead Length
Copper Pads
0.51 x 0.51
" (13 x 13 mm)
50 to 60 Hz
Resistive or Inductive Load
0 - 10 µF
10 - 100 µF
> 100 µF
Ambient Temperature (°C)
Average Forward Output Current (A)
0
10
100
0
10
20
30
40
50
Number of Cycles at 50 Hz
Peak Forward Surge Current (A)
T
J
= 125 °C
10 ms Single Sine-Wave
1.0 Cycle
0.4
0.8
1.2
10
1
0.1
0.01
0.6
1.0
1.4
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Surge Current (A)