Datasheet

B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM
www.vishay.com
Vishay General Semiconductor
Revision: 16-Aug-13
1
Document Number: 88533
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Glass Passivated Ultrafast Bridge Rectifier
FEATURES
• Ideal for automated placement
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: 
For definitions of compliance please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: DFM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
PRIMARY CHARACTERISTICS
Package DFM
I
F(AV)
0.9 A
V
RRM
65 V, 125 V, 200 V, 400 V, 600 V
I
FSM
45 A
I
R
10 μA
V
F
at I
F
= 0.9 A 1.0 V
T
J
max. 125 °C
Diode variations Quad
~
~
Case Style DFM
~
~
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
B40
C800DM
B80
C800DM
B125
C800DM
B250
C800DM
B380
C800DM
UNIT
Maximum repetitive peak reverse voltage V
RRM
65 125 200 400 600 V
Maximum RMS input voltage R- and C-load V
RMS
40 80 125 250 380 V
Maximum average forward output current
for free air operation at T
A
= 45 °C
R- and L-load
I
F(AV)
0.9
A
C-load 0.8
Maximum DC blocking voltage V
DC
65 125 200 400 600 V
Maximum peak working voltage V
RWM
90 180 300 600 900 V
Maximum non-repetitive peak voltage V
RSM
100 200 350 650 1000 V
Maximum repetitive peak forward surge current I
FRM
10 A
Peak forward surge current single sine-wave on rated load I
FSM
45 A
Rating for fusing at T
J
= 125 °C (t < 100 ms) I
2
t 10 A
2
s
Minimum series resistor C-load at V
RMS
= ± 10 % R
T
1.0 2.0 4.0 8.0 12.0 
Maximum load capacitance
+ 50 %
- 10 %
C
L
5000 2500 1000 500 200 μF
Operating junction temperature range T
J
- 40 to + 125 °C
Storage temperature range T
STG
- 40 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL
B40
C800DM
B80
C800DM
B125
C800DM
B250
C800DM
B380
C800DM
UNIT
Maximum instantaneous forward
voltage drop per diode
0.9 A V
F
1.0 V
Maximum reverse current at rated
repetitive peak voltage per diode
I
R
10 μA